靜態(tài)隨機(jī)存取存儲(chǔ)器VTI516NF08VMSRAM不需要刷新電路即能保存它內(nèi)部存儲(chǔ)的數(shù)據(jù)。
而DRAM（DynamicRandomAccessMemory)每隔一段時(shí)間，要刷新充電一次，否則內(nèi)部的數(shù)據(jù)即會(huì)消失，因此SRAM具有較高的性能，功耗較小，但是SRAM也有它的缺點(diǎn)，即它的集成度較低，相同容量的DRAM內(nèi)存可以設(shè)計(jì)為較小的體積，但是SRAM卻需要很大的體積。
同樣面積的硅片可以做出更大容量的DRAM，因此SRAM顯得更貴。
DensityOrg.Temp.Vcc(V)Speed(ns)PackagePackingStatusP/N4Mbit512Kx8Industrial3.38/1036BGATrayMPVTI504NF08NM4Mbit512Kx8Industrial5.01044TSOP2TrayMPVTI504HF08VM4Mbit512Kx8Industrial5.01036BGATrayMPVTI504HF08NM4Mbit256Kx16Industrial1.88/10/1244TSOP2TrayMPVTI504LF16VM4Mbit256Kx16Industrial1.88/10/1248BGATrayMPVTI504LF16LM4Mbit256Kx16Industrial3.38/1044TSOP2TrayMPVTI504NF16VM4Mbit256Kx16Industrial3.38/1048BGATrayMPVTI504NF16LM4Mbit256Kx16Industrial5.01044TSOP2TrayMPVTI504HF16VM4Mbit256Kx16Industrial5.01048BGATrayMPVTI504HF16LM8Mbit1Mx8Industrial1.88/10/1244TSOP2TrayMPVTI508LF08VM8Mbit1Mx8Industrial1.88/10/1248BGATrayMPVTI508LF08LM8Mbit1Mx8Industrial3.38/1044TSOP2TrayMPVTI508NF08VM8Mbit1Mx8Industrial3.38/1048BGATrayMPVTI508NF08LM8Mbit1Mx8Industrial5.01044TSOP2TrayMPVTI508HF08VM8Mbit1Mx8Industrial5.01048BGATrayMPVTI508HF08LM8Mbit512Kx16Industrial1.88/10/1244TSOP2TrayMPVTI508LF16VM8Mbit512Kx16Industrial1.88/10/1248BGATrayMPVTI508LF16LM8Mbit512Kx16Industrial3.38/1044TSOP2TrayMPVTI508NF16VM8Mbit512Kx16Industrial3.38/1048BGATrayMPVTI508NF16LM8Mbit512Kx16Industrial5.01044TSOP2TrayMPVTI508HF16VM8Mbit512Kx16Industrial5.01048BGATrayMPVTI508HF16LM16Mbit2Mx8Industrial1.88/10/1244TSOP2TrayMPVTI516LF08VM16Mbit2Mx8Industrial1.88/10/1248BGATrayMPVTI516LF08LM16Mbit2Mx8Industrial3.38/1044TSOP2TrayMPVTI516NF08VM16Mbit2Mx8Industrial3.38/1048BGATrayMPVTI516NF08LM標(biāo)簽：同步sr存儲(chǔ)器存儲(chǔ)芯片?同步sram存儲(chǔ)器存儲(chǔ)芯片?深圳市VTI516NF08VM?深圳市VTI516NF08VM廠家

廣東 深圳市[同步sram 存儲(chǔ)器 存儲(chǔ)芯片] 深圳市VTI516NF08VM廠家
靜態(tài)隨機(jī)存取存儲(chǔ)器VTI516NF08VM